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August 31, 2019


Multi Gate Devices

By Dr Subham Tayal, Associate Professor, AIET

This seminar will give immense information on multiple gates that may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
Multiple gate transistors Double-gate FinFET Gate-all-around MOSFET scaling will be explained with architectures. With this, audience will know how to design the multilevel gate and to put on in advanced applications.


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Speaker Bio:
Dr. Shubham Tayal has been awarded Ph.D. in Microelectronics and VLSI Design from NIT, Kurukshetra in 2018. He has pursued his M. Tech in VLSI Design from YMCA University of Science & Technology, Faridabad and his B. Tech in Electronics & Communication Engineering from Maharishi Dayanand University, Rohtak. He has qualified GATE (2011,2013,2014) and UGC-NET (2017). He has 4 years of teaching experience at UG and PG level in various technical institutes of national repute.
  • WHERESeminar Hall, Block-A
  • WHENSaturday, 31st August 2019
  • ADMISSION: Open to the Public
  • TAGS: Double gate, FINFET, MOSFET, Maser
  • AUDIENCE: Students

He has contributed 13 (SCI/SCIE/SCOPUS – 10, Others – 03) research papers in International Journals, 2 research papers in IEEE Conference, and 2 research papers in other National Conferences. His research interests include simulation and modelling of Multi-gate semiconductor devices, Device-Circuit co-design in digital/analog domain, and low power VLSI Design. He is a member of IAENG (International Association of Engineers) and Associate Member of IRED (Institute of Research Engineers and Doctors).



August 31, 2019